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1SS396
1SS396 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS396 Low Voltage High Speed Switching Unit: mm Low forward voltage : VF (3) = 0.54V (typ.) Low reverse current : IR = 5μA (max.) Small package : SC-59 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 45 V Reverse voltage VR 40 V Maximum (peak) forward current IFM 300 * mA Maximum (peak) reverse Voltage Average forward current IO 100 * mA IFSM 1* A Power dissipation P 150 * mW Junction temperature Tj 125 °C Storage temperature range Tstg −55∼125 °C Operating temperature range Topr −40∼100 °C Surge current (10ms) JEDEC TO-236MOD JEITA SC-59 TOSHIBA 1-3G1G Weight: 0.012g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). * Unit rating. Total rating = unit rating × 0.7 Electrical Characteristics (Ta = 25°C) Symbol Test Circuit VF (1) Characteristic ― VF (2) Min Typ. Max IF = 1mA ― 0.28 ― ― IF = 10mA ― 0.36 ― VF (3) ― IF = 100mA ― 0.54 0.60 Reverse current IR ― VR = 40V ― ― 5 μA Total capacitance CT ― VR = 0, f = 1MHz ― 18 25 pF Forward voltage Test Condition Unit V Marking 1 2007-11-01
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