1SS352
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS352
Ultra High Speed Switching Application
Unit: mm
AEC-Q101 Qualified (Note1)
Small package
Low forward voltage
: VF (3) = 0.98V (typ.)
Fast reverse recovery time : trr = 1.6ns (typ.)
Small total capacitance
: CT = 0.5pF (typ.)
Note1: For detail information, please contact to our sales.
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
VRM
85
V
Reverse voltage
VR
80
V
Maximum (peak) forward current
IFM
200
mA
Average forward current
IO
100
mA
IFSM
1
A
Power dissipation
P
200 (*)
mW
JEDEC
―
Junction temperature
Tj
125
°C
JEITA
―
Storage temperature
Tstg
−55 to 125
°C
TOSHIBA
Maximum (peak) reverse voltage
Surge current (10ms)
1-1E1A
Weight: 0.004g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(*): Mounted on a glass epoxy circuit board of 20 × 20mm, pad dimension of 4 × 4mm.
Electrical Characteristics (Ta = 25°C)
Symbol
Test
Circuit
VF (1)
Characteristic
―
VF (2)
Min
Typ.
Max
IF = 1mA
―
0.62
―
―
IF = 10mA
―
0.75
―
VF (3)
―
IF = 100mA
―
0.98
1.20
IR (1)
―
VR = 30V
―
―
0.1
IR (2)
―
VR = 80V
―
―
0.5
Total capacitance
CT
―
VR = 0, f = 1MHz
―
0.5
3.0
pF
Reverse recovery time
trr
―
IF = 10mA, Fig.1
―
1.6
4.0
ns
Forward voltage
Reverse current
Test Condition
Unit
V
μA
Start of commercial production
1989-10
1
2015-01-09