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1SS315
1SS315 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS315 UHF Band Mixer Applications Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit VRM 5 V Forward current IF 30 mA Junction temperature Tj 125 °C Tstg −55~125 °C Maximum (peak) reverse voltage Storage temperature range Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). JEDEC ― JEITA ― TOSHIBA 1-1E1A Weight: 0.004 g (typ.) Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Forward voltage VF IF = 2 mA ⎯ 0.25 ⎯ V Forward current IF VF = 0.5 V 30 ⎯ ⎯ mA Reverse current IR VR = 0.5 V ⎯ ⎯ 25 μA Total capacitance CT VR = 0.2 V, f = 1 MHz ⎯ 0.6 ⎯ pF Marking 1 2007-11-01
TOSHIBA
株式会社 東芝セミコンダクター&ストレージ社
日本
半導体部門、DRAM、フラッシュメモリ、プロセッサ、汎用LSI
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