FDC637AN
Single N-Channel, 2.5V Specified PowerTrenchTM MOSFET
General Description
Features
This N-Channel 2.5V specified MOSFET is produced
using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain low
gate charge for superior switching performance.
6.2 A, 20 V. RDS(on) = 0.024 Ω @ VGS = 4.5 V
RDS(on) = 0.032 Ω @ VGS = 2.5 V
Applications
DC/DC converter
Load switch
Battery Protection
D
•
Fast switching speed.
•
Low gate charge (10.5nC typical).
•
High performance trench technology for extremely
low RDS(ON).
•
These devices have been designed to offer exceptional
power dissipation in a very small footprint compared
with bigger SO-8 and TSSOP-8 packages.
•
•
•
•
SuperSOTTM-6 package: small footprint (72% smaller
than standard SO-8); low profile (1mm thick).
S
SuperSOT TM
-6
1
D
D
5
3
4
G
Absolute Maximum Ratings
Symbol
6
2
D
TA = 25°C unless otherwise noted
Parameter
FDC637AN
Units
V
VDSS
Drain-Source Voltage
20
VGSS
Gate-Source Voltage
±8
V
ID
Drain Current
- Continuous
6.2
A
Drain Current
- Pulsed
PD
Power Dissipation for Single Operation
(Note 1a)
20
1.6
(Note 1b)
TJ, T stg
(Note 1a)
0.8
Operating and Storage Junction Temperature Range
W
-55 to +150
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
78
°C/W
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
30
°C/W
Package Outlines and Ordering Information
Device Marking
Device
Reel Size
Tape Width
Quantity
.637
FDC637AN
7’’
8mm
3000 units
1999 Fairchild Semiconductor Corporation
FDC637AN, Rev. C
FDC637AN
November 1999
FDC637AN
Typical Characteristics
20
2.5
2.5V
3.0V
16
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
VGS= 4.5V
2.0V
12
8
4
1.5V
2
VGS= 2.0V
1.5
2.5V
3.0V
4.5V
1
0.5
0
0
0.4
0.8
1.2
1.6
0
2
5
Figure 1. On-Region Characteristics.
20
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
ID= 6.2A
VGS= 4.5V
1.4
RDS(ON), ON RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
15
0.08
1.5
1.3
1.2
1.1
1
0.9
0.8
ID= 6.2A
0.06
0.04
o
TJ= 125 C
o
25 C
0.02
0.7
0
-50
-25
0
25
50
75
100
125
150
1
2
3
4
5
VGS, GATE TO SOURCE VOLTAGE (V)
o
TJ, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
100
20
o
o
25 C
IS, REVERSE DRAIN CURRENT (A)
TJ= -55 C
VDS= 5V
ID, DRAIN CURRENT (A)
10
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
o
125 C
15
10
5
VGS = 0
10
1
o
TJ= 125 C
o
25 C
0.1
o
-55 C
0.01
0.001
0.0001
0
0.5
1
1.5
2
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
2.5
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE VOLTAGE (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDC637AN, Rev. C
