FDC638P
P-Channel 2.5V PowerTrench® Specified MOSFET
General Description
Features
This P
-Channel 2.5V specified MOSFET is produced
using
Fairchild
Semiconductor’s
advanced
PowerTrench process that has been especially tailored
to minimize the on-state resistance and yet maintain
low gate charge for superior switching performance
• –4.5 A, –20 V. RDS(ON) = 48 mΩ @ V GS = –4.5 V
RDS(ON) = 65 mΩ @ V GS = –2.5 V
These devices are well suited for battery power
applications: load switching and power management,
battery charging circuits, and DC/DC conversion.
• High performance trench technology for extremely
low RDS(ON)
• Low gate charge (10 nC typical)
• SuperSOT ™ –6 package: small footprint (72%
smaller than standard SO-8; low profile (1mm thick)
S
D
1
G
TM
-6
pin 1
D
4
D
Absolute Maximum Ratings
Symbol
5
3
SuperSOT
6
2
D
TA=25oC unless otherwise noted
Ratings
Units
V DSS
Drain-Source Voltage
Parameter
–20
V
V GSS
Gate-Source Voltage
±8
V
ID
Drain Current
–4.5
A
PD
Power Dissipation for Single Operation
– Continuous
(Note 1a)
– Pulsed
–20
1.6
(Note 1b)
TJ , TSTG
(Note 1a)
0.8
W
–55 to +150
°C
(Note 1a)
78
°C/W
(Note 1)
30
°C/W
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJ C
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
.638
FDC638P
7’’
8mm
3000 units
©2001 Fairchild Semiconductor Corporation
FDC638P Rev F1 (W)
FDC638P
September 2001
FDC638P
Typical Characteristics
20
1.6
V GS = -4.5V
-2.5V
RDS(ON) NORMALIZED
,
DRAIN-SOURCE ON-RESISTANCE
-ID, DRAIN CURRENT (A)
-3.0V
15
-2.0V
10
5
0
0
1
2
3
1.4
1.2
-3.0V
-3.5V
-4.0V
0.8
4
0
Figure 1. On-Region Characteristics.
5
10
-ID , DRAIN CURRENT (A)
15
20
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
0.15
ID = -4.5A
V GS = -4.5V
RDS(ON) ON-RESISTANCE (OHM)
,
ID = -2.2A
1.4
1.2
1
0.8
0.6
0.12
0.09
TA = 125o C
0.06
T A = 25o C
0.03
0
-50
-25
0
25
50
75
100
125
150
1
2
T J, JUNCTION TEMPERATURE ( oC)
3
4
5
-V GS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
15
100
T A = -55oC
25o C
-I S, REVERSE DRAIN CURRENT (A)
V DS = -5V
12
-I D, DRAIN CURRENT (A)
-4.5V
1
-V DS , DRAIN TO SOURCE VOLTAGE (V)
RDS(ON) NORMALIZED
,
DRAIN-SOURCE ON-RESISTANCE
VGS = -2.5V
125oC
9
6
3
0
0.5
1
1.5
2
-V GS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
2.5
V GS = 0V
10
1
TA = 125 oC
0.1
25oC
0.01
-55o C
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDC638P Rev F (W)
