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FDD6030BL

製品説明
仕様・特性

FDD6030BL/FDU6030BL 30V N-Channel PowerTrench® MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(ON) in a small package. • 42 A, 30 V RDS(ON) = 16 mΩ @ V GS = 10 V RDS(ON) = 22 mΩ @ V GS = 4.5 V • Low gate charge (22 nC typical) • Fast switching Applications • High performance trench technology for extremely low RDS(ON) • DC/DC converter • Motor drives D D G S I-PAK (TO-251AA) D-PAK TO-252 (TO-252) G G D S Absolute Maximum Ratings Symbol S TA=25oC unless otherwise noted Ratings Units V DSS Drain-Source Voltage 30 V V GSS Gate-Source Voltage ±20 V ID Continuous Drain Current @TC=25°C (Note 3) 42 A @TA =25°C (Note 1a) 10 Pulsed (Note 1a) 100 PD Parameter Power Dissipation (Note 3) (Note 1a) 3.8 @TA =25°C (Note 1b) W 50 @TA =25°C TJ , TSTG @TC=25°C 1.6 –55 to +175 Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJ C Thermal Resistance, Junction-to-Case (Note 1) 3.0 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 45 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) 96 °C/W Package Marking and Ordering Information Device Marking Device Package Reel Size Tape width Quantity FDD6030BL FDD6030BL D-PAK (TO-252) 13’’ 12mm 2500 units FDU6030BL FDU6030BL I-PAK (TO-251) Tube N/A 75 ©2001 Fairchild Semiconductor Corporation FDD6030BL/FDU6030BL Rev C(W) FDD6030BL/FDU6030BL July 2001 Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Drain–Source Diode Characteristics and Maximum Ratings IS V SD Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward V GS = 0 V, IS = 3.2 A Voltage 0.7 (Note 2) 3.2 1.2 A V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) RθJA = 45°C/W when mounted on a 1in2 pad of 2 oz copper b) RθJA = 96°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. Maximum current is calculated as: PD R DS(ON) where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A FDD6030BL/FDU6030BL Rev. C(W) FDD6030BL/FDU6030BL Electrical Characteristics

ブランド

FAIRCHILD

会社名

Fairchild Semiconductor International, Inc

本社国名

U.S.A

事業概要

アメリカ合衆国の半導体メーカー。世界で初めて半導体集積回路の商業生産を開始した企業である。後に同社からは様々な人材が独立、幾つかはインテルを始めとする世界的な半導体メーカーへと成長していった。

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