FQD6P25 / FQU6P25
October 2008
QFET
®
FQD6P25 / FQU6P25
250V P-Channel MOSFET
General Description
Features
These P-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters.
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•
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-4.7A, -250V, RDS(on) = 1.1Ω @VGS = -10 V
Low gate charge ( typical 21 nC)
Low Crss ( typical 20 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
RoHS Compliant
S
D
!
G!
G
S
D-PAK
G D S
FQD Series
I-PAK
FQU Series
!
Absolute Maximum Ratings
Symbol
VDSS
D
TC = 25°C unless otherwise noted
Parameter
ID
IDM
Drain Current
VGSS
FQD6P25 / FQU6P25
Drain-Source Voltage
- Continuous (TC = 25°C)
Drain Current
Gate-Source Voltage
V
-4.7
A
-3.0
- Continuous (TC = 100°C)
- Pulsed
Units
-250
A
-18.8
A
±30
(Note 1)
V
EAS
Single Pulsed Avalanche Energy
(Note 2)
540
mJ
IAR
Avalanche Current
(Note 1)
-4.7
A
EAR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TA = 25°C) *
(Note 1)
5.5
-5.5
2.5
mJ
V/ns
W
55
0.44
-55 to +150
W
W/°C
°C
300
°C
dv/dt
PD
TJ, TSTG
TL
(Note 3)
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8from case for 5 seconds
Thermal Characteristics
Symbol
RθJC
RθJA
RθJA
Parameter
Typ
Max
Units
Thermal Resistance, Junction-to-Case
--
2.27
°CW
Thermal Resistance, Junction-to-Ambient *
--
50
°CW
Thermal Resistance, Junction-to-Ambient
--
110
°CW
* When mounted on the minimum pad size recommended (PCB Mount)
©2008 Fairchild Semiconductor International
Rev. A1, October 2008
VGS
-15 V
-10 V
-8.0 V
-7.0 V
-6.5 V
-6.0 V
Bottom : -5.5 V
Top :
-I D , Drain Current [A]
1
10
-ID , Drain Current [A]
1
10
0
10
150
0
10
25
-55
Notes :
1. 250 Pulse Test
s
2. TC = 25
-1
10
Notes :
1. VDS = -40V
2. 250 Pulse Test
s
-1
-1
0
10
10
1
10
10
2
4
-VDS , Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
6
-VGS , Gate-Source Voltage [V]
8
10
Figure 2. Transfer Characteristics
3.0
1
10
-I DR , Reverse Drain Current [A]
RDS(on) [ Ω ],
Drain-Source On-Resistance
2.5
VGS = - 10V
2.0
VGS = - 20V
1.5
0
10
1.0
0.5
150
25
Notes :
1. VGS = 0V
2. 250 Pulse Test
s
Note : TJ = 25
0.0
0
4
8
12
16
20
-1
10
-ID , Drain Current [A]
0.0
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
1200
1000
Ciss
Coss
800
600
Notes :
1. VGS = 0 V
2. f = 1 MHz
Crss
400
1.0
1.5
2.0
2.5
3.0
200
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
VDS = -50V
VDS = -125V
10
-VGS, Gate-Source Voltage [V]
1400
0.5
-VSD , Source-Drain Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Capacitance [pF]
FQD6P25 / FQU6P25
Typical Characteristics
VDS = -200V
8
6
4
2
Note : ID = -6.0 A
0
-1
10
0
10
1
10
-VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2008 Fairchild Semiconductor International
0
0
4
8
12
16
20
24
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A1, October 2008
