February 2007
FDN340P
Si e P-ChannelLogi LevelPower ench® MOSFET
ngl
,
c
,
Tr
Gener Descrpton
al
i i
Feat es
ur
Ths P-Ch n el Logi Lev MOSFET i prod c
i
an
c
el
s
u ed
u ig Farc i Semion u tor a v n ed Power Tren h
sn
i hld
c dc
dac
c
proc s th t h s been es illy talored to mii z
es a a
peca
i
nmie
th on tate ress
e
-s
itanc and y mai n low gate
e
et
ntai
c
harge f s
or uperi s tc ng perf
or wi hi
ormanc
e.
• –2A, V
20
RDS( = 70 mΩ @ V GS = –4 V
.5
ON)
RDS( = 1 0 mΩ @ V GS = –2.5 V
1
ON)
• Low gate c
harge ( nC ty c .
7.2
pial)
• Hihperf
g
ormanc trenc tec
e
h hnology f ex
or tremely
low RDS( .
ON)
Thes devc are well s ted f portable elec
e
ies
ui or
tronis
c
a c ti s
pplia on :load s tc ng and power management,
wi hi
batteryc
hargi crc ts and DC/ c erson.
ng i ui ,
DC onv i
• Hi power v i ofndus Standard SOT-23
gh
erson i
try
pa k g Id tia pi-ou to SOT-23 wi 30%
c a e. en c l n t
th
hi
gher power handli c pabity
ng a
li .
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Absol e Maxi um Ratngs
ut
m
i
Sym bol
G
S
TA=25oC u les oth s n
n s erwie oted
Ratngs
i
Unis
t
V DSS
Dran
i-Sourc Voltage
e
Par et
am er
–20
V
V GSS
Ga
te-Sourc Voltage
e
±8
V
ID
Dran Cu
i
rren
t
–2
A
PD
Power Dispa on f Sig Opera on
s i ti or n le
ti
– Con n ou
tiu s
(
Note 1 )
a
– Pu ed
ls
–1
0
0.5
(
Note 1
b)
TJ ,TSTG
(
Note 1 )
a
0.4
6
W
–55 to +1
50
°C
(
Note 1 )
a
250
°C/
W
(
Note 1
)
75
°C/
W
Opera n a d Stora e Ju c on Tempera re Ra g
tig n
g
n ti
tu
ne
Ther al
m Char erstcs
act i i
RθJA
Th
erma Ress n e,Ju c on
l
ita c
n ti -to-Ambi t
en
RθJ C
Th
erma Ress n e, n ti -to-Ca e
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ita c Ju c on
s
Package Mar ng and Or i I or aton
ki
derng nf m i
Devi M ar ng
ce
ki
De i e
vc
ReelSi e
z
Tape wi h
dt
Quantt
iy
30
4
FDN3 0P
4
7’
’
8mm
3
000 u i
nts
©2007 Fai hi Semionduc Corporati
rc ld
c
tor
on
FDN340P Rev E1
FDN340P
September 200
FDN340P
Typical Characteristics
15
V GS = -4.5V
RDS(ON) NORMALIZED
,
DRAIN-SOURCE ON-RESISTANCE
-2.5V
V
12
-ID, DRAIN CURRENT (A)
2
-3.0V
-3.5V
9
-2.0V
6
3
-1.5V
0
V GS=-2.0V
1.8
1.6
-2.5V
1.4
-3.0V
1.2
-3.5V
-4.5V
1
0.8
0
1
2
3
4
0
3
6
-VDS , DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
15
0.22
ID = -1A
ID = -2A
V GS = -4.5V
1.3
RDS(ON) ON-RESISTANCE (OHM)
,
RDS(ON) NORMALIZED
,
DRAIN-SOURCE ON-RESISTANCE
12
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.4
1.2
1.1
1
0.9
0.8
0.7
0.18
0.14
TA = 125o C
0.1
TA = 25 oC
0.06
0.02
-50
-25
0
25
50
75
100
125
150
1
2
T J, JUNCTION TEMPERATURE ( oC)
3
4
5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
10
T A = -55oC
25o C
-IS , REVERSE DRAIN CURRENT (A)
V DS = -5V
8
-ID, DRAIN CURRENT (A)
9
-ID , DRAIN CURRENT (A)
125oC
6
4
2
0
0.5
1
1.5
2
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
2.5
V GS = 0V
1
T A = 125o C
0.1
25oC
0.01
-55 o C
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
-VSD , BODY DIODE FORW ARD VOLTAGE (V)
Figure 6 Body Diode Forward Voltage Variation
.
with Source Current and Temperature.
FDN340P Rev E1
