FDN361AN
N-Channel, Logic Level, PowerTrenchΤΜ
General Description
Features
This N-Channel Logic Level MOSFET is produced using
Fairchild Semiconductor's PowerTrench process that has
been especially tailored to minimize the on-state resistance
and yet maintain low gate charge for superior switching
performance.
• 1.8 A, 30 V. RDS(on) = 0.100 Ω
@ VGS = 10 V
RDS(on) = 0.150 Ω @ VGS = 4.5 V.
•
Low gate charge ( 2.1nC typical ).
•
Fast switching speed.
•
High performance trench technology for extremely
low RDS(on).
•
High power version of industry standard SOT-23
package. Identical pin out to SOT-23 with
30% higher power handling capability.
Applications
• DC/DC converter
• Load switch
• Motor drives
D
D
S
TM
SuperSOT -3
Absolute Maximum Ratings
Symbol
S
G
G
o
TA=25 C unless otherwise noted
Parameter
FDN361AN
Units
VDSS
Drain-Source Voltage
30
V
VGSS
Gate-Source Voltage - Continuous
V
ID
Drain Current
(Note 1a)
±20
1.8
PD
Power Dissipation for Single Operation
(Note 1a)
0.5
(Note 1b)
0.46
- Continuous
- Pulsed
8
Operating and Storage Junction Temperature Range
TJ, Tstg
A
-55 to +150
W
°C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
(Note 1a)
250
°C/W
Thermal Resistance, Junction-to-Case
RθJA
RθJC
(Note 1)
75
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
361
FDN361AN
7’’
8mm
3000 units
1998 Fairchild Semiconductor Corporation
FDN361AN, Rev. C
FDN361AN
April 1999
(continued)
2.5
VGS= 10 V
6 .0V
4.5V
R DS(ON ) , NORMALIZED
4.0V
6
3.5V
4
3.0V
2
0
DRAIN-SOURCE O N-RESISTANCE
I D , DRAIN -SOURCE C URRENT (A)
8
FDN361AN
Typical Characteristics
2
VGS = 3. 5V
4. 0V
1.5
4. 5V
7. 0V
10V
1
0.5
0
0.5
1
1.5
2
2.5
0
3
2
4
Figure 1. On-Region Characteristics.
10
0.3
I D = 1.8 A
R D S(O N) , O N-RES IS TANCE (OHM)
RD S(ON) , NORMALIZED
8
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
DRAIN-SO URCE ON-RES ISTANCE
6
I D , DRAIN CURRENT (A)
VDS , DRAIN -SOURCE VOLTAGE (V)
V GS = 10 V
1.4
1.2
1
0.8
0.6
-50
I D = 0.9A
0.25
0.2
0.15
TA = 125°C
0.1
0
-25
0
25
50
75
100
125
150
TA = 25°C
0.05
2
4
6
8
10
V GS , GATE TO SOURCE VOLT AGE (V)
TJ , JUNCTION TEMPERAT URE (°C)
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
8
IS , REVERSE DRAIN CURRENT (A)
TJ = -55°C
VD S =5.0V
I D, DRAIN CURRENT (A)
5. 0V
25°C
6
1 25°C
4
2
0
1
2
3
4
VGS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
5
VGS= 0V
TJ = 1 25° C
1
25° C
0.1
-55° C
0
.01
0.001
0.2
0.4
V
SD
0.6
0.8
1
1.2
, BODY DIODE FO RWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDN361AN, Rev. C
