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1SS373
1SS373 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS373 High Speed Switching Application Unit: mm l Small package l Low forward voltage: VF = 0.23V (typ.) @IF = 5mA Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage VR 10 V Maximum (peak) forward current IFM 200 mA Average forward current IO 100 mA IFSM 1 A P* 150 mW Tj 125 °C Storage temperature range Tstg −55~125 °C Operating temperature range Topr −40~100 °C Maximum (peak) reverse Voltage Surge current (10ms) Power dissipation Junction temperature * Mounted on a glass epoxy circuit board of 20 × 20 mm Pad dimension of 4 × 4 mm. JEDEC EIAJ TOSHIBA Weight: 1.9mg ― ― 1-1F1A Electrical Characteristics (Ta = 25°C) Symbol Test Circuit VF (1) Characteristic ― VF (2) Min Typ. Max IF = 1mA ― 0.18 ― ― IF = 5mA ― 0.23 0.30 VF (3) ― IF = 100mA ― 0.35 0.50 Reverse current IR ― VR = 10V ― ― 20 µA Total capacitance CT ― VR = 0, f = 1MHz ― 20 40 pF Forward voltage Test Condition Equivalent Circuit (Top View) Unit V Marking 1 2001-06-07
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