FDW252P
P-Channel 2.5V Specified PowerTrench MOSFET
General Description
Features
This P-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V – 12V).
•
–8.8 A, –20 V. RDS(ON) = 0.0125 Ω @ VGS = –4.5 V
RDS(ON) = 0.018 Ω @ VGS = –2.5 V
•
Extended VGSS range (±12V) for battery
applications
•
Low gate charge
•
High performance trench technology for extremely
low RDS(ON)
•
Low profile TSSOP-8 package
Applications
•
Load switch
•
Motor drive
•
DC/DC conversion
•
Power management
D
S
S
D
5
6
2
8
TSSOP-8
3
7
G
S
S
D
4
1
Pin 1
Absolute Maximum Ratings
Symbol
TA=25oC unless otherwise noted
Ratings
Units
VDSS
Drain-Source Voltage
Parameter
–20
V
VGSS
Gate-Source Voltage
± 12
V
ID
Drain Current
–8.8
A
PD
Power Dissipation
– Continuous
(Note 1)
– Pulsed
–50
1.3
(Note 1b)
TJ, TSTG
(Note 1a)
0.6
Operating and Storage Junction Temperature Range
W
–55 to +150
°C
(Note 1a)
96
°C/W
(Note 1b)
208
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
252P
FDW252P
13’’
16mm
2500 units
2008 Fairchild Semiconductor Corporation
FDW252P Rev. C1(W)
FDW252P
July 2008
FDW252P
Typical Characteristics
30
VGS = -4.5V
25
2
-2.5V
-3.0V
1.8
-2.0V
VGS = -2.0V
20
1.6
15
1.4
10
-2.5V
1.2
-1.5V
5
-3.0V
-3.5V
-4.0V
1
0
0
0.5
1
1.5
-4.5V
0.8
0
6
12
-VDS, DRAIN TO SOURCE VOLTAGE (V)
18
24
30
-ID, DIRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.035
1.5
ID = -4.4A
ID = -8.8A
VGS = -4.5V
1.4
0.03
1.3
0.025
1.2
1.1
0.02
1
0.015
o
TA = 125 C
o
TA = 25 C
0.9
0.01
0.8
0.005
0.7
-50
-25
0
25
50
75
100
125
1.5
150
2
TJ, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation with
Temperature.
3
3.5
4
4.5
5
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
50
VDS = -5V
2.5
-VGS, GATE TO SOURCE VOLTAGE (V)
o
o
VGS = 0V
o
TA = -55 C
25 C
10
40
o
o
TA = 125 C
125 C
30
20
0.1
10
o
1
0.01
25 C
o
-55 C
0.001
0
0.5
1
1.5
2
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
2.5
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDW252P Rev. C1(W)
