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部品型式

FDW252P

製品説明
仕様・特性

FDW252P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). • –8.8 A, –20 V. RDS(ON) = 0.0125 Ω @ VGS = –4.5 V RDS(ON) = 0.018 Ω @ VGS = –2.5 V • Extended VGSS range (±12V) for battery applications • Low gate charge • High performance trench technology for extremely low RDS(ON) • Low profile TSSOP-8 package Applications • Load switch • Motor drive • DC/DC conversion • Power management D S S D 5 6 2 8 TSSOP-8 3 7 G S S D 4 1 Pin 1 Absolute Maximum Ratings Symbol TA=25oC unless otherwise noted Ratings Units VDSS Drain-Source Voltage Parameter –20 V VGSS Gate-Source Voltage ± 12 V ID Drain Current –8.8 A PD Power Dissipation – Continuous (Note 1) – Pulsed –50 1.3 (Note 1b) TJ, TSTG (Note 1a) 0.6 Operating and Storage Junction Temperature Range W –55 to +150 °C (Note 1a) 96 °C/W (Note 1b) 208 Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 252P FDW252P 13’’ 16mm 2500 units 2008 Fairchild Semiconductor Corporation FDW252P Rev. C1(W) FDW252P July 2008 FDW252P Typical Characteristics 30 VGS = -4.5V 25 2 -2.5V -3.0V 1.8 -2.0V VGS = -2.0V 20 1.6 15 1.4 10 -2.5V 1.2 -1.5V 5 -3.0V -3.5V -4.0V 1 0 0 0.5 1 1.5 -4.5V 0.8 0 6 12 -VDS, DRAIN TO SOURCE VOLTAGE (V) 18 24 30 -ID, DIRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.035 1.5 ID = -4.4A ID = -8.8A VGS = -4.5V 1.4 0.03 1.3 0.025 1.2 1.1 0.02 1 0.015 o TA = 125 C o TA = 25 C 0.9 0.01 0.8 0.005 0.7 -50 -25 0 25 50 75 100 125 1.5 150 2 TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation with Temperature. 3 3.5 4 4.5 5 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 50 VDS = -5V 2.5 -VGS, GATE TO SOURCE VOLTAGE (V) o o VGS = 0V o TA = -55 C 25 C 10 40 o o TA = 125 C 125 C 30 20 0.1 10 o 1 0.01 25 C o -55 C 0.001 0 0.5 1 1.5 2 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 2.5 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDW252P Rev. C1(W)

ブランド

FAIRCHILD

会社名

Fairchild Semiconductor International, Inc

本社国名

U.S.A

事業概要

アメリカ合衆国の半導体メーカー。世界で初めて半導体集積回路の商業生産を開始した企業である。後に同社からは様々な人材が独立、幾つかはインテルを始めとする世界的な半導体メーカーへと成長していった。

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