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FDW2520C
FDW2520C July 2008 FDW2520C Complementary PowerTrench MOSFET General Description Features This complementary MOSFET device is produced using Fairchild’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. • Q1: N-Channel RDS(ON) = 18 mΩ @ VGS = 4.5 V RDS(ON) = 28 mΩ @ VGS = 2.5 V 6 A, 20 V. • Applications Q2: P-Channel –4.4A, 20 V. • DC/DC conversion • Power management RDS(ON) = 35 mΩ @ VGS = –4.5 V RDS(ON) = 57 mΩ @ VGS = –2.5 V • High performance trench technology for extremely low RDS(ON) • Low profile TSSOP-8 package • Load switch G2 S2 S2 D2 Q1 Q2 1 2 TSSOP-8 7 3 6 4 G1 S1 S1 D1 8 5 Pin 1 Absolute Maximum Ratings Symbol TA = 25°C unless otherwise noted Parameter VDSS VGSS Drain Current - Continuous - Pulsed Power Dissipation PD (Note 1a) Q2 Units 20 Drain-Source Voltage Gate-Source Voltage ID Q1 –20 ±12 6 30 ±12 –4.4 –30 V V 1.0 (Note 1b) TJ, TSTG (Note 1a) A 0.6 Operating and Storage Junction Temperature Range W –55 to +150 °C (Note 1a) 125 °C/W (Note 1b) 208 Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient Package Marking and Ordering Information Device Marking 2520C 2008 Fairchild Semiconductor Corporation Device FDW2520C Reel Size Tape width Quantity 13’’ 12mm 2500 units FDW2520C Rev C1(W)
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