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FDW2520C

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FDW2520C July 2008 FDW2520C Complementary PowerTrench MOSFET General Description Features This complementary MOSFET device is produced using Fairchild’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. • Q1: N-Channel RDS(ON) = 18 mΩ @ VGS = 4.5 V RDS(ON) = 28 mΩ @ VGS = 2.5 V 6 A, 20 V. • Applications Q2: P-Channel –4.4A, 20 V. • DC/DC conversion • Power management RDS(ON) = 35 mΩ @ VGS = –4.5 V RDS(ON) = 57 mΩ @ VGS = –2.5 V • High performance trench technology for extremely low RDS(ON) • Low profile TSSOP-8 package • Load switch G2 S2 S2 D2 Q1 Q2 1 2 TSSOP-8 7 3 6 4 G1 S1 S1 D1 8 5 Pin 1 Absolute Maximum Ratings Symbol TA = 25°C unless otherwise noted Parameter VDSS VGSS Drain Current - Continuous - Pulsed Power Dissipation PD (Note 1a) Q2 Units 20 Drain-Source Voltage Gate-Source Voltage ID Q1 –20 ±12 6 30 ±12 –4.4 –30 V V 1.0 (Note 1b) TJ, TSTG (Note 1a) A 0.6 Operating and Storage Junction Temperature Range W –55 to +150 °C (Note 1a) 125 °C/W (Note 1b) 208 Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient Package Marking and Ordering Information Device Marking 2520C 2008 Fairchild Semiconductor Corporation Device FDW2520C Reel Size Tape width Quantity 13’’ 12mm 2500 units FDW2520C Rev C1(W)

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