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SI7850DP-T1-E3
Si7850DP Vishay Siliconix N-Channel 60-V (D-S) Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.022 at VGS = 10 V 10.3 0.031 at VGS = 4.5 V 60 ID (A) 8.7 PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFETs • New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile • PWM Optimized for Fast Switching • 100 % Rg Tested APPLICATIONS S 6.15 mm • Primary Side Switch for 24 V DC/DC Applications • Secondary Synchronous Rectifier 5.15 mm 1 S 2 S 3 G D 4 D 8 D 7 D 6 D G 5 Bottom View S Ordering Information: Si7850DP-T1-E3 (Lead (Pb)-free) Si7850DP-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 85 °C IS IDM IAS EAS Continuous Source Current Pulsed Drain Current Avalanche Currentb Single Avalanche Energyb Maximum Power Dissipation ID a TA = 25 °C TA = 85 °C PD TJ, Tstg Operating Junction and Storage Temperature Range 10 s 10.3 7.5 3.7 4.5 2.3 Steady State 60 ± 20 6.2 4.5 1.5 40 15 11 1.8 0.9 - 55 to 150 Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) Symbol t ≤ 10 s Steady State Steady State RthJA RthJC Typical 22 58 2.6 Maximum 28 70 3.3 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. b. Guaranteed by design, not subject to production testing. Document Number: 71625 S09-0227-Rev. E, 09-Feb-09 www.vishay.com 1
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