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RTQ045N03TRLEADED
RTQ045N03 RTQ045N03FRA Transistors AEC-Q101 Qualified 2.5V Drive Nch MOS FET RTQ045N03 RTQ045N03FRA External dimensions (Unit : mm) Structure Silicon N-channel MOS FET TSMT6 1.0MAX 2.9 1.9 0.95 0.95 (5) 0.7 (4) 1.6 2.8 (6) (2) (1) 0~0.1 (3) 1pin mark 0.16 0.4 0.3~0.6 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT6) . 0.85 Each lead has same dimensions Abbreviated symbol : QM Application Power switching, DC / DC converter. Packaging specifications Package Type Equivalent circuit Taping (6) (4) (5) (6) (5) (4) (1) (2) (3) TR Code Basic ordering unit (pieces) 3000 ∗2 RTQ045N03 RTQ045N03FRA ∗1 Absolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Total power dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg (1) Limits 30 12 ±4.5 ±18 1.0 4.0 1.25 150 −55~+150 Unit V V A A A A W °C °C (2) (3) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (1) Drain (2) Drain (3) Gate (4) Source (5) Drain (6) Drain ∗A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded. ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board. Thermal resistance Parameter Channel to ambient Symbol Rth (ch-a) ∗ Limits 100 Unit °C / W ∗ Mounted on a ceramic board. Rev.C 1/3
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