FDC6306P
Dual P-Channel 2.5V Specified PowerTrench™ MOSFET
General Description
Features
These P-Channel 2.5V specified MOSFETs are produced
using Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize
on-state resistance and yet maintain low gate charge for
superior switching performance.
•
-1.9 A, -20 V. RDS(on) = 0.170 Ω @ VGS = -4.5 V
RDS(on) = 0.250Ω @ VGS = -2.5 V
Low gate charge (3 nC typical).
•
Fast switching speed.
•
High performance trench technology for extremely
low RDS(ON).
•
These devices have been designed to offer exceptional
power dissipation in a very small footprint for applications
where the bigger more expensive SO-8 and TSSOP-8
packages are impractical.
•
SuperSOTTM-6 package: small footprint (72% smaller
than standard SO-8); low profile (1mm thick).
Applications
• Load switch
• Battery protection
• Power management
D2
S1
4
3
5
2
6
D1
1
G2
SuperSOT TM -6
S2
G1
Absolute Maximum Ratings
Symbol
TA = 25°C unless otherwise noted
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
-20
V
VGSS
Gate-Source Voltage
V
ID
Drain Current
(Note 1a)
±8
-1.9
-5
A
PD
Power Dissipation for Single Operation
(Note 1a)
0.96
W
(Note 1b)
0.9
- Continuous
- Pulsed
(Note 1c)
TJ, Tstg
Operating and Storage Junction Temperature Range
0.7
-55 to +150
°C
°C/W
°C/W
Thermal Characteristics
RθJA
RθJC
Thermal Resistance, Junction-to-Ambient
(Note 1a)
130
Thermal Resistance, Junction-to-Case
(Note 1)
60
Package Outlines and Ordering Information
Device Marking
.306
©1999 Fairchild Semiconductor Corporation
Device
Reel Size
Tape Width
Quantity
FDC6306P
7’’
8mm
3000 units
FDC6306P Rev. C
FDC6306P
February 1999
FDC6306P
Typical Characteristics
2
V GS= -4.5V
-4.0V
10
8
R D S(on), NORMALI ZED
-3.5V
-3.0V
6
-2.5V
4
-2.0V
2
DRAIN-SOURCE O N-RESI STANCE
- ID , DRAIN-SOURCE CURRENT (A)
12
1.8
VGS = -2 .5 V
1.6
1.4
-3.0V
-3.5V
1.2
-4.0V
-4.5V
1
0.8
0
0
0
1
2
3
4
2
4
5
Figure 1. On-Region Characteristics.
10
0.5
R D S(ON) , ON-RESISTANCE (OHM)
I D = -1.9A
V GS= -4.5V
1. 4
1. 2
1
0. 8
0. 6
-50
ID = -1A
0.4
0.3
0.2
TJ = 1 25° C
0.1
25° C
0
-25
0
25
50
75
100
125
150
1
2
3
4
5
-VGS , GATE TO SOURCE VOLT AG E (V)
T , JUNCTION T EMPERAT URE (°C)
J
Figure 3. On-Resistance Variation
with Temperature.
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
10
10
VDS = -5V
-I S , REVERSE DRAIN CURRENT (A)
R D S(ON), NORMALIZED
DRAIN-SOURCE O N-RESISTANCE
8
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
1. 6
- ID , DRAIN CURRENT (A)
6
- I D , DRAIN CURRENT (A)
-V DS , DRAIN-SOURCE VOLTAG E (V)
TJ = -55°C
25°C
1 25°C
8
6
4
2
0
0
1
2
3
4
-VGS , GATE T O SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
5
VGS = 0V
1
T = 125°C
J
25 °C
0.1
-55°C
0.01
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-VSD , BODY DIODE FORWARD VOLT AGE (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDC6306P Rev. C
