FDC6318P
Dual P-Channel 1.8V PowerTrench Specified MOSFET
General Description
Features
These P-Channel 1.8V specified MOSFETs are
produced using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain low
gate charge for superior switching performance.
• –2.5 A, –12 V. RDS(ON) = 90 mΩ @ VGS = –4.5 V
RDS(ON) = 125 mΩ @ VGS = –2.5 V
RDS(ON) = 200 mΩ @ VGS = –1.8 V
Applications
• High performance trench technology for extremely
low RDS(ON)
• Power management
• SuperSOTTM-6 package: small footprint (72%
smaller than standard SO-8); low profile (1mm thick)
• Load switch
D2
S1
4
SuperSOT
-6
G1
S2
Absolute Maximum Ratings
Symbol
2
6
G2
TM
3
5
D1
1
TA=25oC unless otherwise noted
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
–12
V
VGSS
Gate-Source Voltage
±8
V
ID
Drain Current
–2.5
A
– Continuous
(Note 1a)
– Pulsed
–7
Power Dissipation for Single Operation
(Note 1a)
0.96
(Note 1b)
PD
0.9
(Note 1c)
TJ, TSTG
W
0.7
–55 to +150
°C
(Note 1a)
130
°C/W
(Note 1)
60
°C/W
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
.318
FDC6318P
13’’
12mm
3000 units
2001 Fairchild Semiconductor Corporation
FDC6318P Rev D (W)
FDC6318P
December 2001
FDC6318P
Typical Characteristics
2.2
VGS=-4.5V
-2.5V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
-ID, DRAIN CURRENT (A)
10
-3.0V
8
-2.0V
6
-1.8V
4
-1.5V
2
VGS = -1.8V
2
1.8
-2.0V
1.6
-2.5V
1.4
-3.0V
1.2
-3.5V
-4.5V
1
0.8
0
0
1
2
3
0
4
2
4
Figure 1. On-Region Characteristics.
8
10
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.26
1.3
ID = -2.5A
VGS = -4.5V
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
6
-ID, DRAIN CURRENT (A)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
1.2
1.1
1
0.9
ID = -1.5A
0.2
TA = 125oC
0.14
TA = 25oC
0.08
0.02
0.8
-50
-25
0
25
50
75
100
125
1
150
2
3
4
5
-VGS, GATE TO SOURCE VOLTAGE (V)
o
TJ, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
8
10
TA = -55oC
25oC
-IS, REVERSE DRAIN CURRENT (A)
-ID, DRAIN CURRENT (A)
VDS = -5V
125oC
6
4
2
0
VGS = 0V
1
TA = 125oC
25oC
0.1
-55oC
0.01
0.001
0.5
1
1.5
2
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
2.5
0
0.2
0.4
0.6
0.8
1
1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDC6318P Rev D (W)
