FDC6333C
30V N & P-Channel PowerTrench® MOSFETs
General Description
Features
These N & P-Channel MOSFETs are produced using
Fairchild Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize
on-state resistance and yet maintain superior
switching performance.
• Q1
2.5 A, 30V.
RDS(ON) = 95 mΩ @ VGS = 10 V
RDS(ON) = 150 mΩ @ VGS = 4.5 V
• Q2
–2.0 A, 30V.
RDS(ON) = 150 mΩ @ VGS = –10 V
RDS(ON) = 220 mΩ @ VGS = –4.5 V
These devices have been designed to offer
exceptional power dissipation in a very small footprint
for applications where the bigger more expensive
SO-8 and TSSOP-8 packages are impractical.
• Low gate charge
• High performance trench technology for extremely
low RDS(ON).
Applications
• SuperSOT –6 package: small footprint (72% smaller than
• DC/DC converter
• Load switch
• LCD display inverter
SO-8); low profile (1mm thick).
D2
Q2(P)
S1
4
G2
SuperSOT
TM
-6
Pin 1
3
5
D1
2
S2
G1
1
6
Q1(N)
SuperSOT™-6
Absolute Maximum Ratings
Symbol
o
TA=25 C unless otherwise noted
Q1
Q2
Units
VDSS
Drain-Source Voltage
Parameter
30
–30
V
VGSS
Gate-Source Voltage
±16
±25
V
ID
Drain Current
2.5
–2.0
A
8
–8
– Continuous
(Note 1a)
– Pulsed
Power Dissipation for Single Operation
PD
(Note 1a)
0.96
(Note 1b)
TJ, TSTG
0.9
(Note 1c)
0.7
W
–55 to +150
°C
(Note 1a)
130
°C/W
(Note 1)
60
°C/W
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
.333
FDC6333C
7’’
8mm
3000 units
©2001 Fairchild Semiconductor Corporation
FDC6333C Rev C (W)
FDC6333C
October 2001
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max Units
Drain–Source Diode Characteristics and Maximum Ratings
VSD
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
Q1
0.8
Q2
IS
–0.8
Q1
VGS = 0 V, IS = 0.8 A
(Note 2)
0.8
1.2
Q2
VGS = 0 V, IS = 0.8 A
(Note 2)
0.8
A
–1.2
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 130 °C/W when
mounted on a 0.125
2
in pad of 2 oz.
copper.
b) 140°/W when mounted
2
on a .004 in pad of 2 oz
copper
c) 180°/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDC6333C Rev C (W)
FDC6333C
Electrical Characteristics
