FDS6162N3
20V N-Channel PowerTrench MOSFET
General Description
Features
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
“low side” synchronous rectifier operation, providing an
extremely low RDS(ON) in a small package.
• 21 A, 20 V
Applications
• High power and current handling capability
• Synchronous rectifier
• Fast switching
RDS(ON) = 4.5 mΩ @ VGS = 4.5 V
RDS(ON) = 6.0 mΩ @ VGS = 2.5 V
• High performance trench technology for extremely
low RDS(ON)
• DC/DC converter
• FLMP SO-8 package: Enhanced thermal
performance in industry-standard package size
5
Bottom-side
Drain Contact
4
6
7
Symbol
2
8
Absolute Maximum Ratings
3
1
TA=25oC unless otherwise noted
Ratings
Units
VDSS
Drain-Source Voltage
Parameter
20
V
VGSS
Gate-Source Voltage
± 12
V
ID
Drain Current
21
A
– Continuous
(Note 1a)
– Pulsed
60
PD
Power Dissipation
TJ, TSTG
Operating and Storage Junction Temperature Range
(Note 1a)
3.0
W
–55 to +150
°C
40
°C/W
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
0.5
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS6162N3
FDS6162N3
13’’
12mm
2500 units
2002 Fairchild Semiconductor Corporation
FDS6162N3 Rev B2 (W)
FDS6162N3
May 2003
FDS6162N3
Typical Characteristics
VGS =4.5V
2.0V
3.0V
50
ID, DRAIN CURRENT (A)
2
2.5V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
60
40
30
20
10
1.5V
0
0.00
1.8
VGS = 2.0V
1.6
1.4
2.5V
1.2
3.0V
3.5V
0.8
0.25
0.50
0.75
1.00
1.25
0
15
VDS, DRAIN-SOURCE VOLTAGE (V)
45
60
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.012
1.6
ID = 21A
VGS = 4.5V
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
30
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
1.4
1.2
1
0.8
0.6
ID = 10.5A
0.01
0.008
TA = 125oC
0.006
TA = 25oC
0.004
0.002
-50
-25
0
25
50
75
100
125
150
1
2
o
TJ, JUNCTION TEMPERATURE ( C)
3
4
5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
withTemperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
60
IS, REVERSE DRAIN CURRENT (A)
VDS = 5V
50
ID, DRAIN CURRENT (A)
4.5V
1
40
30
20
o
TA =125 C
o
10
25 C
o
-55 C
VGS = 0V
10
o
TA = 125 C
1
0.1
o
25 C
o
-55 C
0.01
0.001
0.0001
0
1
1.2
1.4
1.6
1.8
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
2
0
0.2
0.4
0.6
0.8
1
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6162N3 Rev B2 (W)