FDS6375
P-Channel 2.5V Specified PowerTrench® MOSFET
General Description
Features
This P
-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V – 8V).
• –8 A, –20 V. RDS(ON) = 24 mΩ @ V GS = –4.5 V
RDS(ON) = 32 mΩ @ V GS = –2.5 V
Applications
• High performance trench technology for extremely
low RDS(ON)
• Low gate charge (26 nC typical)
• Power management
• High current and power handling capability
• Load switch
• Battery protection
DD
D
D
Pin 1 SO-8
Absolute Maximum Ratings
Symbol
3
2
8
G
S G
S
S
S S
S
4
6
SO-8
5
7
D
D
DD
1
TA=25oC unless otherwise noted
Ratings
Units
V DSS
Drain-Source Voltage
Parameter
–20
V
V GSS
Gate-Source Voltage
±8
V
ID
Drain Current
–8
A
PD
Power Dissipation for Single Operation
– Continuous
(Note 1a)
– Pulsed
–50
(Note 1a)
2.5
(Note 1b)
1.2
(Note 1c)
TJ , TSTG
Operating and Storage Junction Temperature Range
W
1.0
–55 to +175
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
50
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1c)
125
°C/W
RθJ C
Thermal Resistance, Junction-to-Case
(Note 1)
25
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS6375
FDS6375
13’’
12mm
2500 units
©2001 Fairchild Semiconductor Corporation
FDS6375 Rev E(W)
FDS6375
September 2001