FDS7064N
30V N-Channel PowerTrench MOSFET
General Description
Features
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
“low side” synchronous rectifier operation, providing an
extremely low RDS(ON) in a small package.
• 16 A, 30 V
RDS(ON) = 7.5 mΩ @ VGS = 4.5 V
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability
Applications
• Fast switching
• Synchronous rectifier
• FLMP SO-8 package: Enhanced thermal
• DC/DC converter
performance in industry-standard package size
5
Bottom-side
Drain Contact
4
6
7
Symbol
2
8
Absolute Maximum Ratings
3
1
TA=25oC unless otherwise noted
Ratings
Units
VDSS
Drain-Source Voltage
Parameter
30
V
VGSS
Gate-Source Voltage
± 12
V
ID
Drain Current
16
A
– Continuous
(Note 1a)
– Pulsed
60
PD
Power Dissipation for Single Operation
TJ, TSTG
Operating and Storage Junction Temperature Range
(Note 1a)
3.0
W
–55 to +150
°C
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
(Note 1a)
40
°C/W
0.5
RθJA
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS7064N
FDS7064N
13’’
12mm
2500 units
2004 Fairchild Semiconductor Corporation
FDS7064N Rev C2 (W)
FDS7064N
January 2004
FDS7064N
Typical Characteristics
3
VGS = 10V
3.5V
4.5V
50
ID, DRAIN CURRENT (A)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
60
3.0V
2.5V
40
30
2.0V
20
10
VGS = 2.0V
2.5
2
2.5V
1.5
3.0V
0
0.5
1
0
1.5
10
10V
20
30
40
50
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.018
1.8
ID = 16 A
VGS = 10V
1.6
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
4.5V
0.5
0
1.4
1.2
1
0.8
0.6
-50
-25
0
25
50
75
100
125
150
ID = 8 A
0.014
TA = 125oC
0.01
0.006
TA = 25oC
0.002
175
1
2.5
TJ, JUNCTION TEMPERATURE (oC)
4
5.5
7
8.5
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
withTemperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
60
IS, REVERSE DRAIN CURRENT (A)
VDS = 5V
50
ID, DRAIN CURRENT (A)
3.5V
1
40
30
TA = 125oC
20
25oC
10
-55oC
VGS = 0V
10
TA = 125oC
1
25oC
0.1
-55oC
0.01
0.001
0.0001
0
1
1.25
1.5
1.75
2
2.25
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
2.5
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS7064N Rev C2 (W)
