FDS7088N7
30V N-Channel PowerTrench MOSFET
General Description
Features
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
“low side” synchronous rectifier operation, providing an
extremely low RDS(ON) in a small package.
• 23 A, 30 V
Applications
• High power and current handling capability
• Synchronous rectifier
• Fast switching
RDS(ON) = 3 mΩ @ VGS = 10 V
RDS(ON) = 4 mΩ @ VGS = 4.5 V
• High performance trench technology for extremely
low RDS(ON)
• DC/DC converter
• FLMP SO-8 package: Enhanced thermal
performance in industry-standard package size
5
Bottom-side
Drain Contact
4
6
7
Symbol
Drain Current
Units
30
Gate-Source Voltage
ID
Ratings
Drain-Source Voltage
VGSS
1
TA=25oC unless otherwise noted
Parameter
VDSS
2
8
Absolute Maximum Ratings
3
V
±20
– Continuous
(Note 1a)
– Pulsed
23
Power Dissipation for Single Operation
TJ, TSTG
(Note 1a)
3.0
(Note 1b)
PD
A
60
1.5
W
–55 to +150
°C
(Note 1a)
40
°C/W
(Note 1)
0.5
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS7088N7
FDS7088N7
13’’
12mm
2500 units
2004 Fairchild Semiconductor Corporation
FDS7088N7 Rev D1 (W)
FDS7088N7
February 2004
FDS7088N7
Typical Characteristics
VGS = 10V
2.2
4.0V
3.5V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
80
4.5V
60
40
20
3.0V
0
0
0.5
1
VGS = 3.5V
2
1.8
1.6
4.0V
1.4
4.5V
5.0V
1.2
6.0V
10V
1
0.8
1.5
0
20
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
80
0.01
ID = 23A
VGS = 10V
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
60
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
1.4
1.2
1
0.8
0.6
ID = 11.5A
0.008
0.006
TA = 125oC
0.004
TA = 25oC
0.002
0
-50
-25
0
25
50
75
100
125
150
2
4
TJ, JUNCTION TEMPERATURE (oC)
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
80
IS, REVERSE DRAIN CURRENT (A)
VGS = 0V
VDS = 5V
ID, DRAIN CURRENT (A)
40
ID, DRAIN CURRENT (A)
60
40
TA =125oC
25oC
20
-55oC
0
10
TA = 125oC
1
25oC
0.1
-55oC
0.01
0.001
0.0001
2
2.5
3
3.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
4
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS7088N7 Rev D1 (W)
