FDS4672A
tm
40V N-Channel PowerTrench® MOSFET
General Description
Features
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS(ON) and fast switching speed.
• 11 A, 40 V.
Applications
• Low gate charge (35 nC typical)
• DC/DC converter
• High power and current handling capability
RDS(ON) = 13 mΩ @ VGS = 4.5 V
• High performance trench technology for extremely
low RDS(ON)
• RoHS Compliant
D
D
D
5
6
SO-8
S
S
S
Absolute Maximum Ratings
Symbol
2
8
G
3
7
D
4
1
o
TA=25 C unless otherwise noted
Ratings
Units
VDSS
Drain-Source Voltage
Parameter
40
V
VGSS
Gate-Source Voltage
±12
V
ID
Drain Current
(Note 1a)
11
A
EAS
Single Pulse Avalanche Energy
(Note 3)
181
mJ
PD
Power Dissipation for Single Operation
(Note 1a)
2.5
W
(Note 1b)
1.4
(Note 1c)
1.2
– Continuous
– Pulsed
TJ, TSTG
50
-55 to +175
°C
(Note 1a)
50
°C/W
(Note 1)
25
°C/W
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS4672A
FDS4672A
13’’
12mm
2500 units
©2007 Fairchild Semiconductor Corporation
FDS4672A Rev C1 (W)
FDS4672A
February 2007
FDS4672A
Typical Characteristics
50
1.6
VGS = 4.5V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
2.5V
ID, DRAIN CURRENT (A)
3.5V
40
3.0V
30
20
2.0V
10
0
0
0.5
1
1.5
1.4
VGS = 2.5V
1.2
3.0V
3.5V
0
10
20
30
40
50
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
2
0.03
ID = 11A
VGS = 4.5V
1.8
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
4.5V
0.8
2
VDS, DRAIN TO SOURCE VOLTAGE (V)
1.6
1.4
1.2
1
0.8
0.6
0.4
ID = 5.5A
0.026
0.022
TA = 125oC
0.018
0.014
TA = 25oC
0.01
0.006
-50
-25
0
25
50
75
100
125
150
175
1.5
2
2.5
o
3
3.5
4
4.5
5
VGS, GATE TO SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
70
o
VGS = 0V
o
TA = -55 C
25 C
60
IS, REVERSE DRAIN CURRENT (A)
VDS = 5V
ID, DRAIN CURRENT (A)
4.0V
1
o
125 C
50
40
30
20
10
0
10
o
TA = 125 C
1
25oC
0.1
-55oC
0.01
0.001
0.0001
1
1.5
2
2.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
3
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS4672A Rev C1 (W)
