FDS4935A
Dual 30V P-Channel PowerTrench MOSFET
General Description
Features
This P-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications requiring a wide range of gave drive
voltage ratings (4.5V – 20V).
• –7 A, –30 V
Applications
• Fast switching speed
• Power management
• High performance trench technology for extremely
low RDS(ON)
RDS(ON) = 23 mΩ @ VGS = –10 V
RDS(ON) = 35 mΩ @ VGS = –4.5 V
• Low gate charge (15nC typical)
• Load switch
• Battery protection
• High power and current handling capability
DD1
D1
D
D2
D
5
D2
D
6
4
3
Q1
7
SO-8
Pin 1 SO-8
G2
S2 S
G1
S1 G
1
S
Absolute Maximum Ratings
Symbol
8
S
2
Q2
TA=25oC unless otherwise noted
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
–30
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current
–7
A
– Continuous
(Note 1a)
– Pulsed
PD
Power Dissipation for Dual Operation
PD
–30
Power Dissipation for Single Operation
2
(Note 1a)
1.6
(Note 1b)
1
(Note 1c)
TJ, TSTG
W
0.9
–55 to +175
°C
(Note 1a)
78
°C/W
(Note 1)
40
°C/W
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS4935A
FDS4935A
13’’
12mm
2500 units
2002 Fairchild Semiconductor Corporation
FDS4935A Rev A(W)
FDS4935A
March 2002
