FDS4953
Dual 30V P-Channel PowerTrench® MOSFET
General Description
Features
This P
-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications requiring a wide range of gave drive
voltage ratings (4.5V – 25V).
• –5 A, –30 V
Applications
• Fast switching speed
• Power management
• High performance trench technology for extremely
low RDS(ON)
RDS(ON) = 55 mΩ @ V GS = –10 V
RDS(ON) = 95 mΩ @ V GS = –4.5 V
• Low gate charge (6nC typical)
• Load switch
• Battery protection
• High power and current handling capability
DD1
D1
D
D2
D
5
D2
D
6
4
Q1
3
7
SO-8
Pin 1 SO-8
G1
S1 G
G2 S
S2 S
8
1
S
Absolute Maximum Ratings
Symbol
2
Q2
TA=25oC unless otherwise noted
Ratings
Units
V DSS
Drain-Source Voltage
Parameter
–30
V
V GSS
Gate-Source Voltage
±20
V
ID
Drain Current
–5
A
– Continuous
(Note 1a)
– Pulsed
PD
Power Dissipation for Dual Operation
PD
–20
Power Dissipation for Single Operation
2
(Note 1a)
1.6
(Note 1b)
1
(Note 1c)
TJ , TSTG
W
0.9
–55 to +175
°C
(Note 1a)
78
°C/W
(Note 1)
40
°C/W
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJ C
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS4953
FDS4953
13’’
12mm
2500 units
©2002 Fairchild Semiconductor Corporation
FDS4953 Rev D1(W)
FDS4953
May 2002
FDS4953
Typical Characteristics
2
30
V GS = -10V
RDS(ON) NORMALIZED
,
DRAIN-SOURCE ON-RESISTANCE
-6.0V
-ID , DRAIN CURRENT (A)
-5.0V
V
-4.5V
V
20
-4.0V
10
-3.5V
-3.0V
0
1.8
VGS=-4.0V
1.6
-4.0V
1.4
-5.0V
-6.0V
-7.0V
1.2
-8.0V
-10V
1
0.8
0
1
2
3
4
5
6
0
6
12
-V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
30
0.25
ID = -5A
VGS = -10V
ID = -2.5A
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON) NORMALIZED
,
DRAIN-SOURCE ON-RESISTANCE
24
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
1.4
1.2
1
0.8
0.2
0.15
TA = 125o C
0.1
T A = 25o C
0.05
0.6
0
-50
-25
0
25
50
75
100
125
150
175
2
4
TJ , JUNCTION TEMPERATURE (oC)
6
8
10
-V GS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
15
100
25oC
T A = -55o C
-I S, REVERSE DRAIN CURRENT (A)
V DS = -5V
12
-ID, DRAIN CURRENT (A)
18
-ID, DRAIN CURRENT (A)
125oC
9
6
3
0
1
1.5
2
2.5
3
3.5
4
-V GS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
4.5
VGS =0V
10
TA = 125o C
1
25oC
0.1
-55 oC
0.01
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS4953 Rev D1(W)
