FDS4770
40V N-Channel PowerTrench® MOSFET
General Description
Features
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS(ON) and fast switching speed.
• 13.2 A, 40 V. RDS(ON) = 7.5 mΩ @ VGS = 10 V
• Low gate charge
Applications
• High performance trench technology for extremely
low RDS(ON)
• DC/DC converter
• High power and current handling capability
DD
D
D
6
G
S G
S
S
S S
S
SO-8
Pin 1 SO-8
Absolute Maximum Ratings
Symbol
3
2
8
D
D
4
7
D
D
5
1
TA=25oC unless otherwise noted
Ratings
Units
VDSS
Drain-Source Voltage
Parameter
40
V
VGSS
Gate-Source Voltage
± 20
V
ID
Drain Current
(Note 1a)
13.2
A
PD
Power Dissipation for Single Operation
(Note 1a)
2.5
(Note 1b)
1.4
– Continuous
– Pulsed
45
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
W
1.2
–55 to +150
°C
°C/W
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
50
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1c)
125
°C/W
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
25
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS4770
FDS4770
13’’
11mm
2500 units
©2004 Fairchild Semiconductor Corporation
FDS4770 Rev C(W)
FDS4770
May 2004
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Typ
Max Units
Drain–Source Diode Characteristics and Maximum Ratings
IS
0.7
trr
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
VGS = 0 V, IS = 2.1 A
(Note 2)
Voltage
Diode Reverse Recovery Time
IF = 13.2 A, diF/dt = 100 A/µs
32
nS
Qrr
Diode Reverse Recovery Charge
39
nC
VSD
2.1
A
1.2
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 50°C/W when
mounted on a 1in2
pad of 2 oz copper
b) 105°C/W when
mounted on a .04 in2
pad of 2 oz copper
c) 125°C/W when mounted
on a minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS4770 Rev C(W)
FDS4770
Electrical Characteristics
