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2SD1221
2SD1221 TOSHIBA Transistor Silicon NPN Diffused Type (PCT Process) 2SD1221 Audio Frequency Power Amplifier Application • Low collector saturation voltage • High power dissipation: PC = 20 W (Tc = 25°C) • Unit: mm Complementary to 2SB906 : VCE (sat) = 0.4 V (typ.) (IC = 3 A, IB = 0.3 A) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 60 V Emitter-base voltage VEBO 7 V Collector current IC 3 A Base current IB 0.5 A Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range PC 1.0 20 W JEDEC Tj 150 °C Tstg −55 to 150 °C ― JEITA ― TOSHIBA 2-7J1A Note: Using continuously under heavy loads (e.g. the application of high Weight: 0.36 g (typ.) temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/”Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2010-05-19
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