FDC602P
P-Channel 2.5V PowerTrench® Specified MOSFET
General Description
Features
This P-Channel 2.5V specified MOSFET uses a rugged
gate version of Fairchild’s advanced PowerTrench
process. It has been optimized for power management
applications with a wide range of gate drive voltage
(2.5V – 12V).
• –5.5 A, –20 V
RDS(ON) = 35 mΩ @ V GS = –4.5 V
RDS(ON) = 50 mΩ @ V GS = –2.5 V
• Fast switching speed
• High performance trench technology for extremely
low RDS(ON)
Applications
• Battery management
• Load switch
• Battery protection
D
S
TM
1
SuperSOT -6
D
D
5
3
4
G
Absolute Maximum Ratings
Symbol
6
2
D
TA=25oC unless otherwise noted
Ratings
Units
V DSS
Drain-Source Voltage
Parameter
–20
V
V GSS
Gate-Source Voltage
V
ID
Drain Current
±12
–5.5
– Continuous
(Note 1a)
– Pulsed
PD
Maximum Power Dissipation
(Note 1a)
(Note 1b)
TJ , TSTG
A
–20
1.6
W
0.8
–55 to +150
°C
(Note 1a)
78
°C/W
(Note 1)
30
°C/W
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJ C
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
.602
FDC602P
7’’
8mm
3000 units
©2001 Fairchild Semiconductor Corporation
FDC602P Rev C(W)
FDC602P
April 2001
FDC602P
Typical Characteristics
20
2
V GS =-4.5V
-I D, DRAIN CURRENT (A)
16
RDS(ON) NORMALIZED
,
DRAIN-SOURCE ON-RESISTANCE
-3.0V
-3.5V
-2.5V
12
8
-2.0V
4
1.8
1.6
V GS = -2.5V
1.4
-3.0V
1.2
-3.5V
-4.0V
-4.5V
1
0
0
0.5
1
1.5
2
2.5
0.8
3
0
-V DS, DRAIN TO SOURCE VOLTAGE (V)
15
20
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
0.12
ID = -3.0A
RDS(ON) ON-RESISTANCE (OHM)
,
ID = -5.5A
VGS = -4.5V
1.4
1.2
1
0.8
0.6
0.1
0.08
TA = 125o C
0.06
0.04
TA = 25 oC
0.02
0
-50
-25
0
25
50
75
100
125
150
1.5
2
2.5
T J, JUNCTION TEMPERATURE ( oC)
3
3.5
4
4.5
5
-V GS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
20
100
TA = -55o C
25o C
-I S, REVERSE DRAIN CURRENT (A)
V DS = -5.0V
16
-ID , DRAIN CURRENT (A)
10
-ID , DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
RDS(ON) NORMALIZED
,
DRAIN-SOURCE ON-RESISTANCE
5
125o C
12
8
4
0
V GS =-4.5V
10
TA = 125 oC
1
0.1
25o C
0.01
-55 o C
0.001
0.0001
0.5
1
1.5
2
2.5
-V GS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
3
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V SD , BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDC602P Rev C(W)
