FDC604P
P-Channel 1.8V Specified PowerTrench MOSFET
General Description
Features
This P-Channel 1.8V specified MOSFET uses
Fairchild’s low voltage PowerTrench process. It has
been optimized for battery power management
applications.
• –5.5 A, –20 V.
Applications
• Fast switching speed.
• Battery management
• High performance trench technology for extremely
low RDS(ON)
• Load switch
RDS(ON) = 33 mΩ @ VGS = –4.5 V
RDS(ON) = 43 mΩ @ VGS = –2.5 V
RDS(ON) = 60 mΩ @ VGS = –1.8 V
• Battery protection
D
S
1
SuperSOT TM
-6
D
D
5
3
4
G
Absolute Maximum Ratings
Symbol
6
2
D
TA=25oC unless otherwise noted
Ratings
Units
VDSS
Drain-Source Voltage
Parameter
–20
V
VGSS
Gate-Source Voltage
±8
V
ID
Drain Current
–5.5
A
PD
Maximum Power Dissipation
– Continuous
(Note 1a)
– Pulsed
–20
1.6
(Note 1b)
TJ, TSTG
(Note 1a)
0.8
W
–55 to +150
°C
(Note 1a)
78
°C/W
(Note 1)
30
°C/W
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
.604
FDC604P
7’’
8mm
3000 units
2001 Fairchild Semiconductor Corporation
FDC604P Rev C (W)
FDC604P
January 2001
FDC604P
Typical Characteristics
3
20
VGS = -1.5V
VGS = -4.5V
-2.0V
-2.5V
2.5
15
-1.8V
2
-1.8V
10
-2.0V
1.5
-2.5V
-1.5V
5
-4.5V
1
0.5
0
0
1
2
0
3
5
10
15
20
-ID, DRAIN CURRENT (A)
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.12
1.5
ID = -2.8 A
ID = -5.5A
VGS = -4.5V
1.4
0.09
1.3
1.2
1.1
0.06
o
TA = 125 C
1
0.9
0.03
o
TA = 25 C
0.8
0.7
0
-50
-25
0
25
50
75
100
125
150
1
2
o
TJ, JUNCTION TEMPERATURE ( C)
3
4
5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
withTemperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
o
TA = -55 C
VDS = -5V
-IS, REVERSE DRAIN CURRENT (A)
20
o
25 C
15
o
125 C
10
5
VGS = 0V
1
TA = 125oC
0.1
25oC
-55oC
0.01
0.001
0.0001
0
0
0.5
1
1.5
2
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
2.5
0
0.2
0.4
0.6
0.8
1
1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDC604P Rev C(W)
