FDC697P
P-Channel 1.8V PowerTrench MOSFET
General Description
Features
This P-Channel 1.8V specified MOSFET uses
Fairchild’s advanced low voltage Power Trench
process. It has been optimized for battery power
management applications.
• –8 A, –20 V
RDS(ON) = 20 mΩ @ VGS = –4.5 V
RDS(ON) = 25 mΩ @ VGS = –2.5 V
RDS(ON) = 35 mΩ @ VGS = –1.8 V
Applications
• High performance trench technology for extremely
low RDS(ON)
•
Battery management
• Fast switching speed
•
Load Switch
•
• FLMP SuperSOT-6 package: Enhanced thermal
Battery protection
performance in industry-standard package size
G
1
6
2
5
S
S
S
S
SuperSOT-6
TM
3
S
FLMP
Absolute Maximum Ratings
Symbol
Bottom
Drain
4
TA=25oC unless otherwise noted
Ratings
Units
VDSS
Drain-Source Voltage
Parameter
–20
V
VGSS
Gate-Source Voltage
±8
V
ID
Drain Current
–8
A
– Continuous
(Note 1a)
– Pulsed
–40
(Note 1a)
2
(Note 1b)
Power Dissipation
PD
1.5
W
–55 to +150
°C
(Note 1a)
60
°C/W
(Note 1b)
TJ, TSTG
111
Operating and Storage Junction Temperature Range
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
RθJA
0.5
Thermal Resistance, Junction-to-Case
RθJC
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
.697
FDC697P
7’’
8mm
3000 units
2004 Fairchild Semiconductor Corporation
FDC697P Rev C2 (W)
FDC697P
January 2004
