FDC606P
P-Channel 1.8V Specified PowerTrench MOSFET
General Description
Features
This P-Channel 1.8V specified MOSFET uses
Fairchild’s low voltage PowerTrench process. It has
been optimized for battery power management
applications.
• –6 A, –12 V.
Applications
• Fast switching speed
• Battery management
• High performance trench technology for extremely
low RDS(ON)
• Load switch
RDS(ON) = 26 mΩ @ VGS = –4.5 V
RDS(ON) = 35 mΩ @ VGS = –2.5 V
RDS(ON) = 53 mΩ @ VGS = –1.8 V
• Battery protection
D
S
1
SuperSOT TM
-6
D
D
5
3
4
G
Absolute Maximum Ratings
Symbol
6
2
D
TA=25oC unless otherwise noted
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
–12
V
VGSS
Gate-Source Voltage
±8
V
ID
Drain Current
–6
A
PD
Maximum Power Dissipation
– Continuous
(Note 1a)
– Pulsed
–20
1.6
(Note 1b)
TJ, TSTG
(Note 1a)
0.8
Operating and Storage Junction Temperature Range
W
–55 to +150
°C
(Note 1a)
78
°C/W
(Note 1)
30
°C/W
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
.606
FDC606P
7’’
8mm
3000 units
2001 Fairchild Semiconductor Corporation
FDC606P Rev E (W)
FDC606P
December 2001
FDC606P
Typical Characteristics
2.6
-2.5V
VGS = -4.5V
-1.8V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
20
-ID, DRAIN CURRENT (A)
-3.0V
15
10
-1.5V
5
2.4
VGS=-1.5V
2.2
2
1.8
-1.8V
1.6
-2.0V
1.4
-2.5V
1.2
-3.0V
1
-4.5V
0.8
0
0
0.5
1
1.5
2
2.5
0
3
5
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
20
0.08
ID = -6A
VGS = -4.5V
ID = -3A
1.2
1.1
1
0.9
0.8
0.07
0.06
0.05
TA = 125oC
0.04
0.03
TA = 25oC
0.02
0.01
-50
-25
0
25
50
75
100
125
150
1
2
o
TJ, JUNCTION TEMPERATURE ( C)
-IS, REVERSE DRAIN CURRENT (A)
125 C
15
10
5
0
0.75
1
1.25
1.5
5
100
25oC
TA = -55oC
o
0.5
4
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
20
VDS = -5V
3
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
-ID, DRAIN CURRENT (A)
15
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
1.3
10
-ID, DRAIN CURRENT (A)
1.75
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
2
VGS = 0V
10
TA = 125oC
1
25oC
0.1
-55oC
0.01
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDC606P Rev E (W)
