FDS6294
tm
30V N-Channel Fast Switching PowerTrench® MOSFET
General Description
Features
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS(ON) and fast switching speed.
• 13 A, 30 V.
RDS(ON) = 11.3 mΩ @ VGS = 10 V
RDS(ON) = 14.4 mΩ @ VGS = 4.5 V
• Low gate charge (10 nC typical)
Applications
• High performance trench technology for extremely
low RDS(ON)
• DC/DC converter
• High power and current handling capability.
• Power management
• Load switch
• RoHS Compliant
D
D
D
D
DD
D
D
5
6
Pin 1 SO-8
Absolute Maximum Ratings
Symbol
3
7
2
8
G
S G
S
S
S S
S
SO-8
4
1
TA=25oC unless otherwise noted
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
30
V
VGSS
Gate-Source Voltage
± 20
V
ID
Drain Current
13
A
– Continuous
(Note 1a)
– Pulsed
50
Power Dissipation for Single Operation
(Note 1a)
3.0
(Note 1b)
PD
1.2
EAS
Single Pulse Avalanche Energy
TJ, TSTG
Operating and Storage Junction Temperature Range
(Note 3)
W
181
mJ
–55 to +175
°C
°C/W
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
50
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1b)
125
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
25
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS6294
FDS6294
13’’
12mm
2500 units
©2007 Fairchild Semiconductor Corporation
FDS6294 Rev D1 (W)
FDS6294
February 2007
FDS6294
Typical Characteristics
VGS = 10V
6.0V
ID, DRAIN CURRENT (A)
50
2.2
4.0V
4.5V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
60
3.5.V
40
30
20
3.0V
10
2
VGS = 3.5V
1.8
1.6
4.0V
1.4
4.5V
6.0V
10V
1
0.8
0
0
0.5
1
1.5
2
0
2.5
10
20
Figure 1. On-Region Characteristics.
40
50
60
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.028
1.8
ID = 13A
VGS = 10V
1.6
ID = 13A
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
30
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
1.4
1.2
1
0.8
0.024
0.02
0.016
o
TA = 125 C
0.012
0.008
o
TA = 25 C
0.6
-50
-25
0
25
50
75
100
125
150
175
0.004
2
TJ, JUNCTION TEMPERATURE (oC)
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
VDS = 5V
o
TA = -55 C
60
IS, REVERSE DRAIN CURRENT (A)
70
ID, DRAIN CURRENT (A)
5.0V
1.2
o
25 C
125
C
50
o
40
30
20
10
VGS = 0V
10
o
TA = 125 C
1
o
25 C
0.1
o
-55 C
0.01
0.001
0.0001
0
1.5
2
2.5
3
3.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
4
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6294 Rev D1 (W)
